1. gate 2. drain 3. source pin definition: r ds(on) <2.2 ? @ v gs =10v,i d =2.5a fast switching capability lead free in compliance with eu rohs directive. green molding compound ordering information case: to-251,to-252,to-220,ito-220 to-262,to-263 package parameter symbol ratings unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v continuous drain current i d 5 .0 a pulsed drain current (note 2) i dm 20 a avalanche energy single pulsed (note 3) e as 21 0 mj power dissipation to-220 /to-262/to-263 p d 1 0 0 w ito-220 36 w to-251/ to-252 54 w junction temperature t j +150 c operating temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limit ed by maximum junction temperature 3. l = 16.8 mh, i as = 5 a, v dd = 50v, r g = 25 ? , starting t j = 25c block diagram d g s 5n60 series n-channel power mosfet features mechanical data part no. package packing to-251 75pcs / tube to-220 50pcs / tube ito-220 50pcs / tube to-252 75pcs / tube to-2 62 50pcs / tube to-2 63 50pcs / tube 5n60p 5n60d 5n60f 5n60t 5N60K 5n60g maximum ratings t a = 25 c unless otherwise specified
electrical characteristics (t c =25c, unless otherwise specified) parameter symbol t est conditions typmin max unit off characteristics drain-source breakdown voltage bv dss gs v = 0v, i d = 250 a 600 v drain-source leakage current i dss v ds = 600v, v gs = 0v 1 a gate-source leakage current forward i gss v gs = 30v, v ds = 0v 100 na reversee v gs = -30v, v ds = 0v -100 na on characteristics gate threshold voltage v gs ( th ) ds v = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d = 2 . 5 a 1.9 2. 2 ? dynamic characteristics input capacitance c iss v ds = 25v, v gs = 0v, f = 1mhz 5 2 0 pf output capacitance c oss pf 7 0 reverse transfer capacitance c rss pf 7 switching characteristics turn-on delay time t d( on ) 20 ns turn-on rise time t r ns 7 0 turn-off delay time t d( off ) ns 6 0 turn-off fall time t f 120 ns total gate charge q g v ds = 480v,i d = 5 .0a, v gs = 10v (note 1, 2) 2 0 nc gate-source charge q gs nc 1. 5 gate-drain charge q gd nc 1 0 source- drain diode ratings and characteristics drain-source diode forward voltage v sd v gs = 0v,i s = 5 a 1.4 v maximum continuous drain-source diode forward current i s 5 a maximum pulsed drain-source diode forward current i sm 20 a reverse recovery time t rr v gs = 0 v , i s = 5 a, di f /dt = 100 a/ s (note 1) 3 0 0 ns reverse recovery charge q rr c 2.2 notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2.. essenti ly independent of operating temperature thermal data parameter symbol rating unit junction to ambient to-220/ i to-220 to-262/to-263 ja 62.5 c/w to-251/ to-252 110 junction to case jc 2.35 c/w i to-220 5 .5 to-251/ to-252 2. 9 to-220/ i to-220 to-262/to-263 v dd = 300v, i d =5 a, r g = 25 ? (note 1, 2)
test circ uits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * sd controlled by pulse period * d.u.t.-de vice under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
test circuits and waveforms(cont.) switching test circuit switching waveforms gate charge test circuit gate charge waveform v dd bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit t p time unclamped inductive switching waveforms
typical characteristics 10 1 10 0 10 1 10 -1 10 0 drain-source voltage , v ds (v) 10 -1 *notes: 1. 250s250 se test 2. t c =25c v gs top:top: 5.0v bottorm:4.5v on-region characteristics 10 -2 10 0 10 -1 2 gate-source voltage, v gs (v) transfer characteristics 6 4 810 10 1 *notes: 1.. ds =40v 2. 250s pulse test 25c 5v 4.5v drain-source on-resistance, r ds(on) ( ? ) drain current, i d (a) 1 0 0 ms
t o - 220 mechanical drawing it o-220 m echanical drawing
to-2 62 mechanical drawing to-2 63 mechanical drawing
to-251 mechanical drawing to-252 mechanical drawing
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